封装:TO-220-3
通道数量:1Channel
晶体管极性:N-Channel
Vds-漏源极击穿电压:600V
Id-连续漏极电流:25A
RdsOn-漏源导通电阻:105mOhms
Vgs-栅极-源极电压:30V
Vgsth-栅源极阈值电压:2.5V
Qg-栅极电荷:40nC
工作温度:-55C
工作温度:+150C
Pd-功率耗散:180W
配置:Single
通道模式:Enhancement
商标名:DTMOSIV-H
系列:TK25E60X
品牌:Toshiba
下降时间:4ns
产品类型:MOSFET
上升时间:15ns
我们的方案类型包括有标准显示器,ATV电视,车载显示器,
DLP/LCD投影机,医疗显示器,摄影显示器,视频拼接分割,
以及各种领域显示器。特别是在客户专案制定这块,
我们有丰富的经验,可以根据不同项目的要求开发出相对应的软硬件产品。
TK25E60X,S1X
STM8S105K4T6CTR
STM8L151K4U6
STM32L011G4U6TR
STM32L011G4U6TR
STM32L011G4U6TR
STM8L151G6U6TR
STM8L151G6U6TR
STM8L151G6U6TR
STM8L151K6T6TR
STM8L151K6T6TR
STM8L151K6T6TR
STM32F031F6P6TR
TK25E60X,S1X
STM32F031F6P6TR
STM32F031F6P6TR
STM8L151K4T6TR
STM8L151K4T6TR
STM8L151K4T6TR
STM8S105K6U6
STM8L151K6U6TR
STM8L151K6U6TR
STM8L151K6U6TR
STM32F031F6P7TR
STM32F031F6P7TR
STM32F031F6P7TR
STM32L011F4U3TR
STM32L011F4U3TR
STM32L011F4U3TR
TK25E60X,S1X
STM8S105C6T6TR
STM8S105C6T6TR
STM8S105C6T6TR
STM8S105C4T6TR
STM8S105C4T6TR
STM8S105C4T6TR
STM32L031E6Y6TR
STM32L031E6Y6TR
STM32L031E6Y6TR
STM32F031G6U6TR
STM32F031G6U6TR
STM32F031G6U6TR
STM8S105K4T3CTR